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  • Band Alignment and Defect States at SiC/oxide interfaces

    Author(s)
    Afanas'ev, VV
    Ciobanu, F
    Dimitrijev, S
    Pensl, G
    Stesmans, A
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2004
    Metadata
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    Abstract
    Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of electron states is established within less than 1 nm distance from the interface plane. The latter suggests an abrupt transition from semiconductor to insulator. However, a large density of interface traps is observed in the oxidized SiC, which are mostly related to the clustering of elemental carbon during oxide growth and to the presence of defects in the near-interfacial oxides. Recent advancements in reducing the adverse effect of these ...
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    Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of electron states is established within less than 1 nm distance from the interface plane. The latter suggests an abrupt transition from semiconductor to insulator. However, a large density of interface traps is observed in the oxidized SiC, which are mostly related to the clustering of elemental carbon during oxide growth and to the presence of defects in the near-interfacial oxides. Recent advancements in reducing the adverse effect of these traps suggest that the SiC oxidation technology has not reached its limits yet and fabrication of functional SiC/oxide interfaces is possible.
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    Journal Title
    Journal of Physics: Condensed Matter
    Volume
    16
    Publisher URI
    https://iopscience.iop.org/article/10.1088/0953-8984/16/17/019
    Copyright Statement
    © 2004 Institute of Physics. Reproduced in accordance with the copyright policy of the publisher. This journal is available online – use hypertext links.
    Subject
    Condensed matter physics
    Materials engineering
    Nanotechnology
    Publication URI
    http://hdl.handle.net/10072/5144
    Collection
    • Journal articles

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