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dc.contributor.authorCheong, KY
dc.contributor.authorDimitrijev, S
dc.contributor.authorHan, J
dc.contributor.editorMadar, R
dc.contributor.editorCamassel, J
dc.date.accessioned2017-05-03T11:51:36Z
dc.date.available2017-05-03T11:51:36Z
dc.date.issued2004
dc.date.modified2009-09-14T07:14:18Z
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.457-460.1365
dc.identifier.urihttp://hdl.handle.net/10072/5147
dc.description.abstractThe characteristics of non-equilibrium charge in MOS capacitors on p-type 4H SiC with thermally grown nitrided gate oxides have been experimentally investigated for the first time. The reason for short relaxation time of capacitance recovery from deep-depletion to inversion levels has been identified: supply of minority carriers from the perimeter of the capacitors contributes to fast creation of the inversion layer. A negatively biased shielding ring has been employed to eliminate the lateral supply of minority electrons and to enable measurement of the effective generation rate.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherTrans Tech Publications Ltd.
dc.publisher.placeZurich-Uetikon
dc.publisher.urihttp://www.scientific.net/MSF
dc.relation.ispartofpagefrom1365
dc.relation.ispartofpageto1368
dc.relation.ispartofjournalMaterials Science Forum
dc.relation.ispartofvolume457-460
dc.subject.fieldofresearchPhysical chemistry
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchcode3406
dc.subject.fieldofresearchcode4016
dc.titleCharacterisation of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.date.issued2004
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima


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