A P-Channel MOSFET on 4H-SiC

Abstract

4H-SiC based P-channel MOSFET with nitrided gate oxide have been fabricated and analysed. The threshold voltage and the peak channel-carrier mobility, obtained from the transfer characteristic in the linear regime, are -4.8 V and 6 cm2/Vs. The drain current for zero gate bias (off current) is extremely low, which opens new application possibilities such as nonvolatile randomaccess memories.