A P-Channel MOSFET on 4H-SiC
Author(s)
Han, JS
Cheong, KY
Dimitrijev, S
Laube, M
Pensl, G
Griffith University Author(s)
Year published
2004
Metadata
Show full item recordAbstract
4H-SiC based P-channel MOSFET with nitrided gate oxide have been fabricated and analysed. The threshold voltage and the peak channel-carrier mobility, obtained from the transfer characteristic in the linear regime, are -4.8 V and 6 cm2/Vs. The drain current for zero gate bias (off current) is extremely low, which opens new application possibilities such as nonvolatile randomaccess memories.4H-SiC based P-channel MOSFET with nitrided gate oxide have been fabricated and analysed. The threshold voltage and the peak channel-carrier mobility, obtained from the transfer characteristic in the linear regime, are -4.8 V and 6 cm2/Vs. The drain current for zero gate bias (off current) is extremely low, which opens new application possibilities such as nonvolatile randomaccess memories.
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Journal Title
Materials Science Forum
Volume
457-460
Publisher URI
Subject
Physical chemistry
Materials engineering