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  • A P-Channel MOSFET on 4H-SiC

    Author(s)
    Han, JS
    Cheong, KY
    Dimitrijev, S
    Laube, M
    Pensl, G
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2004
    Metadata
    Show full item record
    Abstract
    4H-SiC based P-channel MOSFET with nitrided gate oxide have been fabricated and analysed. The threshold voltage and the peak channel-carrier mobility, obtained from the transfer characteristic in the linear regime, are -4.8 V and 6 cm2/Vs. The drain current for zero gate bias (off current) is extremely low, which opens new application possibilities such as nonvolatile randomaccess memories.4H-SiC based P-channel MOSFET with nitrided gate oxide have been fabricated and analysed. The threshold voltage and the peak channel-carrier mobility, obtained from the transfer characteristic in the linear regime, are -4.8 V and 6 cm2/Vs. The drain current for zero gate bias (off current) is extremely low, which opens new application possibilities such as nonvolatile randomaccess memories.
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    Journal Title
    Materials Science Forum
    Volume
    457-460
    Publisher URI
    http://www.scientific.net/MSF
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.457-460.1401
    Subject
    Physical chemistry
    Materials engineering
    Publication URI
    http://hdl.handle.net/10072/5148
    Collection
    • Journal articles

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