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dc.contributor.authorHan, JS
dc.contributor.authorCheong, KY
dc.contributor.authorDimitrijev, S
dc.contributor.authorLaube, M
dc.contributor.authorPensl, G
dc.contributor.editorMadar, R
dc.contributor.editorCamassel, J
dc.date.accessioned2017-05-03T11:51:37Z
dc.date.available2017-05-03T11:51:37Z
dc.date.issued2004
dc.date.modified2009-09-14T07:14:21Z
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.457-460.1401
dc.identifier.urihttp://hdl.handle.net/10072/5148
dc.description.abstract4H-SiC based P-channel MOSFET with nitrided gate oxide have been fabricated and analysed. The threshold voltage and the peak channel-carrier mobility, obtained from the transfer characteristic in the linear regime, are -4.8 V and 6 cm2/Vs. The drain current for zero gate bias (off current) is extremely low, which opens new application possibilities such as nonvolatile randomaccess memories.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherTrans Tech Publications Ltd.
dc.publisher.placeZurich-Uetikon
dc.publisher.urihttp://www.scientific.net/MSF
dc.relation.ispartofpagefrom1401
dc.relation.ispartofpageto1404
dc.relation.ispartofjournalMaterials Science Forum
dc.relation.ispartofvolume457-460
dc.subject.fieldofresearchPhysical chemistry
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchcode3406
dc.subject.fieldofresearchcode4016
dc.titleA P-Channel MOSFET on 4H-SiC
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.date.issued2004
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima


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