Sub-Micron Lithography Using InGaN Micro-LEDs: Mask-Free Fabrication of LED Arrays

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Author(s)
Massoubre, David
Guilhabert, Benoit
Richardson, Elliot
J. D. McKendry, Jonathan
Valentine, Gareth
K. Henderson, Robert
M. Watson, Ian
Gu, E.
D. Dawson, Martin
Griffith University Author(s)
Year published
2012
Metadata
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The fabrication of gallium-nitride (GaN)-based light-emitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOS-driven ultraviolet GaN-based micro-LED arrays are used to pattern photoresist layers with feature sizes as small as 500 nm. Checkerboard-type square LED array devices are then fabricated using such photoresist patterns based on either single pixel or multipixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays are composed of either 450-nm-emitting 199 x 199 mu m(2) pixels on a 200-mu m pitch or ...
View more >The fabrication of gallium-nitride (GaN)-based light-emitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOS-driven ultraviolet GaN-based micro-LED arrays are used to pattern photoresist layers with feature sizes as small as 500 nm. Checkerboard-type square LED array devices are then fabricated using such photoresist patterns based on either single pixel or multipixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays are composed of either 450-nm-emitting 199 x 199 mu m(2) pixels on a 200-mu m pitch or 520-nm-emitting 21 x 18 mu m(2) pixels on a 23-mu m pitch. Fill factors of 99% and 71.5% are achieved with optical output power densities per pixel of 5 and 20 W/cm(2) at 90- and 6-mA dc-injected currents, respectively.
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View more >The fabrication of gallium-nitride (GaN)-based light-emitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOS-driven ultraviolet GaN-based micro-LED arrays are used to pattern photoresist layers with feature sizes as small as 500 nm. Checkerboard-type square LED array devices are then fabricated using such photoresist patterns based on either single pixel or multipixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays are composed of either 450-nm-emitting 199 x 199 mu m(2) pixels on a 200-mu m pitch or 520-nm-emitting 21 x 18 mu m(2) pixels on a 23-mu m pitch. Fill factors of 99% and 71.5% are achieved with optical output power densities per pixel of 5 and 20 W/cm(2) at 90- and 6-mA dc-injected currents, respectively.
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Journal Title
IEEE Photonics Technology Letters
Volume
24
Issue
24
Copyright Statement
© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Subject
Photonics, Optoelectronics and Optical Communications
Optical Physics
Electrical and Electronic Engineering