Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power
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Micropixelated blue (470nm) and ultraviolet (370nm) AlInGaN light emitting diode ('micro-LED') arrays have been fabricated in flip-chip format with different pixel diameters (72 mu m and 30 mu m at, respectively, 100 and 278 pixels/mm(2)). Each micro-LED pixel can be individually-addressed and the devices possess a specially designed n-common contact incorporated to ensure uniform current injection and consequently uniform light emission across the array. The flip-chip micro-LEDs show, per pixel, high continuous output intensity of up to 0.55 mu W/mu m(2) (55W/cm(2)) at an injection current density of 10kA/cm(2) and can sustain continuous injection current densities of up to 12kA/cm(2) before breakdown. We also demonstrate that nanosecond pulsed output operation of these devices with per pixel on-axis average peak intensity up to 2.9 mu W/mu m(2) (corresponding to energy of 45pJ per 22ns optical pulse) can be achieved. We investigate the pertinent performance characteristics of these arrays for micro-projection applications, including the prospect of integrated optical pumping of organic semiconductor lasers.
© 2008 OSA. This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OE.16.009918. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.
Photonics, Optoelectronics and Optical Communications