Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes
Abstract
We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1 +/- 0.3) x 10(-29) cm(6) s(-1) at 450 nm and (3 +/- 1) x 10(-30) cm(6) s(-1) at 520 nm.
Journal Title
Applied Physics Letters
Volume
102
Issue
9
Copyright Statement
© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. Vol.102, 091103 (2013) and may be found at http://dx.doi.org/10.1063/1.4794078.
Subject
Photonics, Optoelectronics and Optical Communications