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  • Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

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    Author(s)
    P. Green, Richard
    J. D. McKendry, Jonathan
    Massoubre, David
    Gu, Erdan
    D. Dawson, Martin
    Kelly, A.
    Griffith University Author(s)
    Massoubre, David
    Year published
    2013
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    Abstract
    We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1 +/- 0.3) x 10(-29) cm(6) s(-1) at 450 nm and (3 +/- 1) x 10(-30) cm(6) s(-1) at 520 nm.We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1 +/- 0.3) x 10(-29) cm(6) s(-1) at 450 nm and (3 +/- 1) x 10(-30) cm(6) s(-1) at 520 nm.
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    Journal Title
    Applied Physics Letters
    Volume
    102
    Issue
    9
    DOI
    https://doi.org/10.1063/1.4794078
    Copyright Statement
    © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. Vol.102, 091103 (2013) and may be found at http://dx.doi.org/10.1063/1.4794078.
    Subject
    Photonics, Optoelectronics and Optical Communications
    Physical Sciences
    Engineering
    Technology
    Publication URI
    http://hdl.handle.net/10072/53311
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    • Journal articles

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