Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; Cantoro, Mirco; Gendt, Stefan; Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, F.; Leonelli, Daniele; Lin, Denis; Magnus, Wim; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecken, Philippe; Verhulst, Anne; Wang, Wei-E

doi:10.1117/12.852587

Abstract

The use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap.

Conference Title

Proceedings of SPIE

Publisher URI

http://spie.org/x39509.xml

DOI

https://doi.org/10.1117/12.852587

Copyright Statement

© 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Subject

Microelectronics and Integrated Circuits

Publication URI

http://hdl.handle.net/10072/53332

Collection

Conference outputs