Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

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Author(s)
Heyns, Marc
Bellenger, Florence
Brammertz, Guy
Caymax, Matty
Cantoro, Mirco
Gendt, Stefan
Jaeger, Brice
Delabie, Annelies
Eneman, Geert
Groeseneken, Guido
Hellings, Geert
Houssa, Michel
Iacopi, F.
Leonelli, Daniele
Lin, Denis
Magnus, Wim
Martens, Koen
Merckling, Clement
Meuris, Marc
Mitard, Jerome
Penaud, Julien
Pourtois, Geoffrey
Scarrozza, Marco
Simoen, Eddy
Soree, Bart
Van Elshocht, Sven
Vandenberghe, William
Vandooren, Anne
Vereecken, Philippe
Verhulst, Anne
Wang, Wei-E
Griffith University Author(s)
Year published
2010
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Abstract
The use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap.
Conference Title
Proceedings of SPIE
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© 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Subject
Microelectronics and Integrated Circuits
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