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  • Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

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    Author(s)
    Heyns, Marc
    Bellenger, Florence
    Brammertz, Guy
    Caymax, Matty
    Cantoro, Mirco
    Gendt, Stefan
    Jaeger, Brice
    Delabie, Annelies
    Eneman, Geert
    Groeseneken, Guido
    Hellings, Geert
    Houssa, Michel
    Iacopi, F.
    Leonelli, Daniele
    Lin, Denis
    Magnus, Wim
    Martens, Koen
    Merckling, Clement
    Meuris, Marc
    Mitard, Jerome
    Penaud, Julien
    Pourtois, Geoffrey
    Scarrozza, Marco
    Simoen, Eddy
    Soree, Bart
    Van Elshocht, Sven
    Vandenberghe, William
    Vandooren, Anne
    Vereecken, Philippe
    Verhulst, Anne
    Wang, Wei-E
    Griffith University Author(s)
    Iacopi, Francesca
    Year published
    2010
    Metadata
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    Abstract
    The use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap.The use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap.
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    Conference Title
    Proceedings of SPIE
    Publisher URI
    http://spie.org/x39509.xml
    DOI
    https://doi.org/10.1117/12.852587
    Copyright Statement
    © 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
    Subject
    Microelectronics and Integrated Circuits
    Publication URI
    http://hdl.handle.net/10072/53332
    Collection
    • Conference outputs

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