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dc.contributor.authorHeyns, Marc
dc.contributor.authorBellenger, Florence
dc.contributor.authorBrammertz, Guy
dc.contributor.authorCaymax, Matty
dc.contributor.authorCantoro, Mirco
dc.contributor.authorGendt, Stefan
dc.contributor.authorJaeger, Brice
dc.contributor.authorDelabie, Annelies
dc.contributor.authorEneman, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHellings, Geert
dc.contributor.authorHoussa, Michel
dc.contributor.authorIacopi, F.
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorLin, Denis
dc.contributor.authorMagnus, Wim
dc.contributor.authorMartens, Koen
dc.contributor.authorMerckling, Clement
dc.contributor.authorMeuris, Marc
dc.contributor.authorMitard, Jerome
dc.contributor.authorPenaud, Julien
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorScarrozza, Marco
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSoree, Bart
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorVandenberghe, William
dc.contributor.authorVandooren, Anne
dc.contributor.authorVereecken, Philippe
dc.contributor.authorVerhulst, Anne
dc.contributor.authorWang, Wei-E
dc.contributor.editorRonald G.Driggers
dc.date.accessioned2017-05-03T15:30:46Z
dc.date.available2017-05-03T15:30:46Z
dc.date.issued2010
dc.date.modified2013-09-24T22:56:17Z
dc.identifier.doi10.1117/12.852587
dc.identifier.urihttp://hdl.handle.net/10072/53332
dc.description.abstractThe use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap.
dc.description.publicationstatusYes
dc.format.extent2312767 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.publisherSPIE
dc.publisher.placeUnited States
dc.publisher.urihttp://spie.org/x39509.xml
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofconferencenameSPIE Advanced Lithography Conference
dc.relation.ispartofconferencetitleProceedings of SPIE
dc.relation.ispartofdatefrom2010-02-21
dc.relation.ispartofdateto2010-02-25
dc.relation.ispartoflocationSan Jose, Ca, United States
dc.rights.retentionY
dc.subject.fieldofresearchMicroelectronics and Integrated Circuits
dc.subject.fieldofresearchcode090604
dc.titleShaping the future of nanoelectronics beyond the Si roadmap with new materials and devices
dc.typeConference output
dc.type.descriptionE2 - Conferences (Non Refereed)
dc.type.codeE - Conference Publications
gro.rights.copyright© 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
gro.date.issued2010
gro.hasfulltextFull Text
gro.griffith.authorIacopi, Francesca


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    Contains papers delivered by Griffith authors at national and international conferences.

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