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  • Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films

    Author(s)
    Iacopi, Francesca
    Walker, Glenn
    Wang, Li
    Malesys, Laura
    Ma, Shujun
    Cunning, Benjamin V
    Iacopi, Alan
    Griffith University Author(s)
    Cunning, Ben V.
    Walker, Glenn M.
    Iacopi, Alan V.
    Wang, Li
    Iacopi, Francesca
    Year published
    2013
    Metadata
    Show full item record
    Abstract
    Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their growth orientation. Stress evaluation locally with Raman spectroscopy, and across a 150mm wafer with curvature measurements, indicate that thin films can be grown on Si(100) with residual tensile stresses as low as 150MPa. However, films on Si(111) retain a considerably higher stress, around 900MPa, with only minor decrease versus film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for the biaxial strain of SiC films grown on Si(111) with <111> orientation. Residual stresses ...
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    Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their growth orientation. Stress evaluation locally with Raman spectroscopy, and across a 150mm wafer with curvature measurements, indicate that thin films can be grown on Si(100) with residual tensile stresses as low as 150MPa. However, films on Si(111) retain a considerably higher stress, around 900MPa, with only minor decrease versus film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for the biaxial strain of SiC films grown on Si(111) with <111> orientation. Residual stresses can be tuned by the epitaxial process temperatures.
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    Journal Title
    Applied Physics Letters
    Volume
    102
    DOI
    https://doi.org/10.1063/1.4774087
    Subject
    Surfaces and Structural Properties of Condensed Matter
    Physical Sciences
    Engineering
    Technology
    Publication URI
    http://hdl.handle.net/10072/54323
    Collection
    • Journal articles

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