Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
Author(s)
Iacopi, Francesca
Walker, Glenn
Wang, Li
Malesys, Laura
Ma, Shujun
Cunning, Benjamin V
Iacopi, Alan
Griffith University Author(s)
Year published
2013
Metadata
Show full item recordAbstract
Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their growth orientation. Stress evaluation locally with Raman spectroscopy, and across a 150mm wafer with curvature measurements, indicate that thin films can be grown on Si(100) with residual tensile stresses as low as 150MPa. However, films on Si(111) retain a considerably higher stress, around 900MPa, with only minor decrease versus film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for the biaxial strain of SiC films grown on Si(111) with <111> orientation. Residual stresses ...
View more >Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their growth orientation. Stress evaluation locally with Raman spectroscopy, and across a 150mm wafer with curvature measurements, indicate that thin films can be grown on Si(100) with residual tensile stresses as low as 150MPa. However, films on Si(111) retain a considerably higher stress, around 900MPa, with only minor decrease versus film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for the biaxial strain of SiC films grown on Si(111) with <111> orientation. Residual stresses can be tuned by the epitaxial process temperatures.
View less >
View more >Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their growth orientation. Stress evaluation locally with Raman spectroscopy, and across a 150mm wafer with curvature measurements, indicate that thin films can be grown on Si(100) with residual tensile stresses as low as 150MPa. However, films on Si(111) retain a considerably higher stress, around 900MPa, with only minor decrease versus film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for the biaxial strain of SiC films grown on Si(111) with <111> orientation. Residual stresses can be tuned by the epitaxial process temperatures.
View less >
Journal Title
Applied Physics Letters
Volume
102
Subject
Physical sciences
Engineering