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dc.contributor.authorIacopi, Francesca
dc.contributor.authorWalker, Glenn
dc.contributor.authorWang, Li
dc.contributor.authorMalesys, Laura
dc.contributor.authorMa, Shujun
dc.contributor.authorCunning, Benjamin V
dc.contributor.authorIacopi, Alan
dc.date.accessioned2017-05-03T15:30:43Z
dc.date.available2017-05-03T15:30:43Z
dc.date.issued2013
dc.date.modified2013-11-19T03:57:31Z
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.4774087
dc.identifier.urihttp://hdl.handle.net/10072/54323
dc.description.abstractResidual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their growth orientation. Stress evaluation locally with Raman spectroscopy, and across a 150mm wafer with curvature measurements, indicate that thin films can be grown on Si(100) with residual tensile stresses as low as 150MPa. However, films on Si(111) retain a considerably higher stress, around 900MPa, with only minor decrease versus film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for the biaxial strain of SiC films grown on Si(111) with <111> orientation. Residual stresses can be tuned by the epitaxial process temperatures.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom011908-1
dc.relation.ispartofpageto011908-4
dc.relation.ispartofjournalApplied Physics Letters
dc.relation.ispartofvolume102
dc.rights.retentionN
dc.subject.fieldofresearchSurfaces and Structural Properties of Condensed Matter
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchTechnology
dc.subject.fieldofresearchcode020406
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode09
dc.subject.fieldofresearchcode10
dc.titleOrientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.date.issued2013
gro.hasfulltextNo Full Text
gro.griffith.authorCunning, Ben V.
gro.griffith.authorWalker, Glenn M.
gro.griffith.authorIacopi, Alan V.
gro.griffith.authorWang, Li
gro.griffith.authorIacopi, Francesca


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