Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC
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Based on the insight that the Fermi level in a metal-oxide-semiconductor field-effect transistor (MOSFET) channel is set in the conduction band, due to the quantum confinement of the channel electrons, this letter provides an experimental demonstration that the near-interface traps responsible for degradation of channel-carrier mobility in SiC MOSFETs are energetically aligned to the conduction band of SiC. The experimental demonstration is based on conductance measurements of MOS capacitors in accumulation. The accumulation conductance does not change with temperature, which demonstrates that there is channel-carrier communication with the near-interface traps by tunneling.
Applied Physics Letters
© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 103, Issue 11, pp. 113506. and may be found at http://dx.doi.org/10.1063/1.4821362
Microelectronics and Integrated Circuits