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dc.contributor.authorChai, J.
dc.contributor.authorNoriega, O.
dc.contributor.authorDedigama, A.
dc.contributor.authorKim, J.
dc.contributor.authorSavage, A.
dc.contributor.authorDoyle, K.
dc.contributor.authorSmith, C.
dc.contributor.authorChau, N.
dc.contributor.authorPena, J.
dc.contributor.authorDinan, J.
dc.contributor.authorSmith, D.
dc.contributor.authorMyers, T.
dc.date.accessioned2017-05-03T16:14:08Z
dc.date.available2017-05-03T16:14:08Z
dc.date.issued2013
dc.date.modified2013-12-10T00:42:11Z
dc.identifier.issn1543186X
dc.identifier.doi10.1007/s11664-013-2650-8
dc.identifier.urihttp://hdl.handle.net/10072/54836
dc.description.abstractCross-section electron micrographs, cathodoluminescence images, and confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B and (100) orientations. The critical thickness of ZnTe on GaSb is predicted to range between 115 nm and 329 nm, depending on the theoretical approach chosen. For ZnTe layers grown on (211)B GaSb with thickness exceeding 150 nm, dark spots and lines are present in all images. We associate these with dislocations generated at the ZnTe/GaSb interface. The discrepancy between this thickness value and a critical thickness value (350 nm to 375 nm) obtained for the (211)B orientation in a previous study is related to the distinction between the onset of misfit dislocations and the onset of significant plastic deformation. The former requires a direct imaging technique, as strain-related measurements such as x-ray diffraction do not have the resolution to detect the effects of small numbers of dislocations. For ZnTe layers on (100) GaSb, x-ray diffraction measurements indicate an abrupt change characteristic of dislocation multiplication at a thickness value in the range from 250 nm to 275 nm. High-resolution electron micrographs of the ZnTe/GaSb interface indicate that deoxidation using atomic hydrogen produces GaSb surfaces suitable for ZnTe epitaxy. cPL images of a 1.2-孭thick lattice-matched ZnTe0.99Se 0.01 layer grown on a 150-nm-thick ZnTe buffer layer on a (211)B GaSb substrate yield a threading dislocation density of ~7 נ104 cm-2.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherSpringer
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom3090
dc.relation.ispartofpageto3096
dc.relation.ispartofissue11
dc.relation.ispartofjournalJournal of Electronic Materials
dc.relation.ispartofvolume42
dc.rights.retentionY
dc.subject.fieldofresearchCompound Semiconductors
dc.subject.fieldofresearchAtomic, Molecular, Nuclear, Particle and Plasma Physics
dc.subject.fieldofresearchElectrical and Electronic Engineering
dc.subject.fieldofresearchOther Technology
dc.subject.fieldofresearchcode091203
dc.subject.fieldofresearchcode0202
dc.subject.fieldofresearchcode0906
dc.subject.fieldofresearchcode1099
dc.titleDetermination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.date.issued2013
gro.hasfulltextNo Full Text
gro.griffith.authorChai, Jessica


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