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  • The Capacitance and Temperature Effects of the SiC- and Si-Based MEMS Pressure Sensor

    Author(s)
    Marsi, N
    Majlis, BY
    Mohd-Yasin, F
    Hamzah, AA
    Griffith University Author(s)
    Mohd-Yasin, Faisal
    Year published
    2013
    Metadata
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    Abstract
    This project develops the pressure sensor for monitoring the extreme conditions inside the gas turbine engine. The capacitive-based instead of piezoresistive-based pressure sensor is employed to avoid temperature drift. The deflecting (top) plate and the fixed (bottom) plate generate the capacitance, which is proportional to the applied input pressure and temperature. Two thin film materials of four different sizes are employed for the top plate, namely cubic silicon carbide (3C-SiC) and silicon (Si). Their performances in term of the sensitivity and linearity of the capacitance versus pressure are simulated at the temperature ...
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    This project develops the pressure sensor for monitoring the extreme conditions inside the gas turbine engine. The capacitive-based instead of piezoresistive-based pressure sensor is employed to avoid temperature drift. The deflecting (top) plate and the fixed (bottom) plate generate the capacitance, which is proportional to the applied input pressure and temperature. Two thin film materials of four different sizes are employed for the top plate, namely cubic silicon carbide (3C-SiC) and silicon (Si). Their performances in term of the sensitivity and linearity of the capacitance versus pressure are simulated at the temperature of 27ì 500ì 700àand 1000î The results show that both materials display linear characteristics for temperature up to 500ì although SiC-based sensor shows higher sensitivity. However, when the temperatures are increased to 700àand 1000ì the Si- based pressure sensor starts to malfunction at 50 MPa. However, the SiC-based pressure sensor continues to demonstrate high sensitivity and linearity at such high temperature and pressure. This paper validates the need of employing silicon carbide instead of silicon for sensing of extreme environments.
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    Journal Title
    Journal of Physics: Conference Series
    Volume
    431
    DOI
    https://doi.org/10.1088/1742-6596/431/1/012022
    Subject
    Condensed matter physics
    Other physical sciences
    Microelectronics
    Microelectromechanical systems (MEMS)
    Publication URI
    http://hdl.handle.net/10072/55487
    Collection
    • Journal articles

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