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dc.contributor.authorMyhra, Sverre
dc.contributor.editorJ E Greene
dc.date.accessioned2017-05-03T11:07:44Z
dc.date.available2017-05-03T11:07:44Z
dc.date.issued2004
dc.date.modified2007-03-18T21:32:59Z
dc.identifier.issn00406090
dc.identifier.urihttp://hdl.handle.net/10072/5755
dc.description.abstractOxide on Si wafers can be manipulated by a scanning probe microscope (SPM) operated in the electrical conductivity mode (ECM), by several distinctly different mechanisms (i.e. anodic oxidation, dielectric break-down, and lateral transport of silicaceous species). The mechanisms can, in principle, support the full sequence of write-read-erase-rewrite operations, and thus a next-generation data storage technology. Bit size ranges from 10 to 50 nm; read-write speeds are currently limited by single probe AFM operation. Electrically conducting diamond-like (DLC) films can be synthesised by an ion-beam assisted CVD route. Such films can be nano-machined with a probe by an ECM method. Present evidence suggests that local heating causes oxidation and prompt conversion to CO2. The process may be useful for fabricating stamps for nano-scale templating. Local deposition of thermal energy may also cause formation of a metastable low-density carbon phase. The phase is stable in vacuum, but will 'collapse' when oxygen is available, at a slow kinetic rate.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherElsevier
dc.publisher.placeSwitzerland
dc.publisher.urihttp://www.elsevier.com/wps/find/journaldescription.cws_home/504106/description#description
dc.relation.ispartofpagefrom90
dc.relation.ispartofpageto94
dc.relation.ispartofjournalThin Solid Films
dc.relation.ispartofvolume459
dc.subject.fieldofresearchHistory and Archaeology
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchTechnology
dc.subject.fieldofresearchcode21
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode09
dc.subject.fieldofresearchcode10
dc.titleManipulation of Si oxide and electrically conducting carbon films by scanning probe microscopy (SPM): nano-lithography and nano-machining
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.rights.copyright© 2004 Elsevier : Reproduced in accordance with the copyright policy of the publisher : This journal is available online
gro.date.issued2004
gro.hasfulltextNo Full Text
gro.griffith.authorMyhra, Sverre


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