A novel high frequency SOI MESFET by modified gate capacitances
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A novel SOI MESFET with high frequency performance over conventional structures is presented. The key idea in this work is to control gate capacitances by modifying channel charges. The proposed structure consists of an additional oxide layer in the channel under gate to control the channel charges. We investigate the improvement in device performance with two-dimensional and two-carrier device simulation. The proposed structure improves the gate-source and gate-drain capacitances and the minimum noise figure in comparison with a conventional SOI MESFET (C-SOI). Moreover, it has been decreased the carriers concentrations especially holes around drain. Hence it causes the generation rate decreases by 137% near the source side with a minimum value around the oxide and therefore the break down voltage will increase. The results demonstrate that the proposed structure has better frequency characteristics in comparison with the C-SOI structure.
Superlattices and Microstructures
© 2013 Elsevier B.V. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
Microelectronics and Integrated Circuits