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dc.contributor.authorA. Orouji, Ali
dc.contributor.authorRamezani, Zeinab
dc.contributor.authorKeshavarzi, P.
dc.contributor.authorAminbeidokhti, Amirhossein
dc.date.accessioned2017-05-03T16:08:42Z
dc.date.available2017-05-03T16:08:42Z
dc.date.issued2013
dc.date.modified2014-05-27T22:24:56Z
dc.identifier.issn07496036
dc.identifier.doi10.1016/j.spmi.2013.06.001
dc.identifier.urihttp://hdl.handle.net/10072/58447
dc.description.abstractA novel SOI MESFET with high frequency performance over conventional structures is presented. The key idea in this work is to control gate capacitances by modifying channel charges. The proposed structure consists of an additional oxide layer in the channel under gate to control the channel charges. We investigate the improvement in device performance with two-dimensional and two-carrier device simulation. The proposed structure improves the gate-source and gate-drain capacitances and the minimum noise figure in comparison with a conventional SOI MESFET (C-SOI). Moreover, it has been decreased the carriers concentrations especially holes around drain. Hence it causes the generation rate decreases by 137% near the source side with a minimum value around the oxide and therefore the break down voltage will increase. The results demonstrate that the proposed structure has better frequency characteristics in comparison with the C-SOI structure.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent1309933 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherElsevier
dc.publisher.placeUnited Kingdom
dc.relation.ispartofstudentpublicationY
dc.relation.ispartofpagefrom69
dc.relation.ispartofpageto80
dc.relation.ispartofjournalSuperlattices and Microstructures
dc.relation.ispartofvolume61
dc.rights.retentionY
dc.subject.fieldofresearchMicroelectronics and Integrated Circuits
dc.subject.fieldofresearchCondensed Matter Physics
dc.subject.fieldofresearchOptical Physics
dc.subject.fieldofresearchQuantum Physics
dc.subject.fieldofresearchcode090604
dc.subject.fieldofresearchcode0204
dc.subject.fieldofresearchcode0205
dc.subject.fieldofresearchcode0206
dc.titleA novel high frequency SOI MESFET by modified gate capacitances
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.rights.copyright© 2013 Elsevier B.V. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
gro.date.issued2013
gro.hasfulltextFull Text
gro.griffith.authorAminbeidokhti, Amirhossein


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