The Fabrication and Characterization of 4H-SiC Power UMOSFETs

Abstract

The fabrication of 4H?SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-?m thick drift layer with 3ױ015 cm?3 N-type doping concentration and a 3.1-?m channel length. The measured on-state source?drain current density is 65.4 A/cm2 at Vg = 40 V and VDS = 15 V. The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics. A specific on-resistance (Rsp-on) is 181 m?centerdotcm2 at Vg = 40 V and a blocking voltage (BV) is 880 V (IDS = 100 ?A@880V) at Vg = 0 V.