• myGriffith
    • Staff portal
    • Contact Us⌄
      • Future student enquiries 1800 677 728
      • Current student enquiries 1800 154 055
      • International enquiries +61 7 3735 6425
      • General enquiries 07 3735 7111
      • Online enquiries
      • Staff phonebook
    View Item 
    •   Home
    • Griffith Research Online
    • Journal articles
    • View Item
    • Home
    • Griffith Research Online
    • Journal articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

  • All of Griffith Research Online
    • Communities & Collections
    • Authors
    • By Issue Date
    • Titles
  • This Collection
    • Authors
    • By Issue Date
    • Titles
  • Statistics

  • Most Popular Items
  • Statistics by Country
  • Most Popular Authors
  • Support

  • Contact us
  • FAQs
  • Admin login

  • Login
  • The Fabrication and Characterization of 4H-SiC Power UMOSFETs

    Author(s)
    Song, Qing-Wen
    Zhang, Yu-Ming
    Han, Ji-Sheng
    Philip, Tanner
    Sima, Dimitrijev
    Zhang, Yi-Men
    Tang, Xiao-Yan
    Guo, Hui
    Griffith University Author(s)
    Dimitrijev, Sima
    Tanner, Philip G.
    Year published
    2013
    Metadata
    Show full item record
    Abstract
    The fabrication of 4H?SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-?m thick drift layer with 3ױ015 cm?3 N-type doping concentration and a 3.1-?m channel length. The measured on-state source?drain current density is 65.4 A/cm2 at Vg = 40 V and VDS = 15 V. The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics. A specific on-resistance (Rsp-on) is 181 m?centerdotcm2 at Vg = 40 V and a blocking voltage (BV) is 880 V (IDS = 100 ?A@880V) at Vg = 0 V.The fabrication of 4H?SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-?m thick drift layer with 3ױ015 cm?3 N-type doping concentration and a 3.1-?m channel length. The measured on-state source?drain current density is 65.4 A/cm2 at Vg = 40 V and VDS = 15 V. The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics. A specific on-resistance (Rsp-on) is 181 m?centerdotcm2 at Vg = 40 V and a blocking voltage (BV) is 880 V (IDS = 100 ?A@880V) at Vg = 0 V.
    View less >
    Journal Title
    Chinese Physics B
    Volume
    22
    Issue
    2
    DOI
    https://doi.org/10.1088/1674-1056/22/2/027302
    Subject
    Mathematical sciences
    Physical sciences
    Engineering
    Microelectronics
    Publication URI
    http://hdl.handle.net/10072/58505
    Collection
    • Journal articles

    Footer

    Disclaimer

    • Privacy policy
    • Copyright matters
    • CRICOS Provider - 00233E
    • TEQSA: PRV12076

    Tagline

    • Gold Coast
    • Logan
    • Brisbane - Queensland, Australia
    First Peoples of Australia
    • Aboriginal
    • Torres Strait Islander