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  • Characterization Direct Bonding of SiC/SiN layer on Si Wafer for MEMS Capacitive Pressure Sensor

    Author(s)
    Marsi, Noraini
    Majlis, Burhanuddin Yeop
    Hamzah, Azrul Azlan
    Yasin, Faisal Mohd
    Griffith University Author(s)
    Mohd-Yasin, Faisal
    Year published
    2013
    Metadata
    Show full item record
    Abstract
    Two silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers ...
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    Two silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers on Si wafer was inspected by scanning electron microscopy (SEM). Heat treatment with different annealing temperatures is indentified that an optimized annealing process was at 400 °C for 2 hours to allow the bond-forming interface between silicon nitride and silicon carbide surfaces being bonded at 8.3467 MPa.
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    Conference Title
    2013 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM 2013)
    Publisher URI
    http://www.ieeemalaysia-eds.org/rsm2013/
    DOI
    https://doi.org/10.1109/RSM.2013.6706470
    Subject
    Microelectronics
    Microelectromechanical systems (MEMS)
    Publication URI
    http://hdl.handle.net/10072/58740
    Collection
    • Conference outputs

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