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dc.contributor.authorMarsi, Noraini
dc.contributor.authorMajlis, Burhanuddin Yeop
dc.contributor.authorHamzah, Azrul Azlan
dc.contributor.authorYasin, Faisal Mohd
dc.contributor.editorIEEE
dc.date.accessioned2017-05-03T15:53:54Z
dc.date.available2017-05-03T15:53:54Z
dc.date.issued2013
dc.date.modified2014-04-22T05:08:08Z
dc.identifier.isbn978-1-4799-1181-3
dc.identifier.refurihttp://www.ieeemalaysia-eds.org/rsm2013/
dc.identifier.doi10.1109/RSM.2013.6706470
dc.identifier.urihttp://hdl.handle.net/10072/58740
dc.description.abstractTwo silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers on Si wafer was inspected by scanning electron microscopy (SEM). Heat treatment with different annealing temperatures is indentified that an optimized annealing process was at 400 °C for 2 hours to allow the bond-forming interface between silicon nitride and silicon carbide surfaces being bonded at 8.3467 MPa.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.publisherIEEE
dc.publisher.placeSerdang, Malaysia
dc.publisher.urihttp://www.ieeemalaysia-eds.org/rsm2013/
dc.relation.ispartofstudentpublicationY
dc.relation.ispartofconferencenameIEEE Regional Symposium on Micro and Nanoelectronics (RSM)
dc.relation.ispartofconferencetitle2013 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM 2013)
dc.relation.ispartofdatefrom2013-09-25
dc.relation.ispartofdateto2013-09-27
dc.relation.ispartoflocationMALAYSIA
dc.relation.ispartofpagefrom50
dc.relation.ispartofpageto53
dc.rights.retentionY
dc.subject.fieldofresearchMicroelectronics
dc.subject.fieldofresearchMicroelectromechanical systems (MEMS)
dc.subject.fieldofresearchcode400908
dc.subject.fieldofresearchcode401705
dc.titleCharacterization Direct Bonding of SiC/SiN layer on Si Wafer for MEMS Capacitive Pressure Sensor
dc.typeConference output
dc.type.descriptionE1 - Conferences
dc.type.codeE - Conference Publications
gro.date.issued2013
gro.hasfulltextNo Full Text
gro.griffith.authorMohd-Yasin, Faisal


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    Contains papers delivered by Griffith authors at national and international conferences.

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