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dc.contributor.authorZhu, Y
dc.contributor.authorYan, GZ
dc.contributor.authorFan, J
dc.contributor.authorZhou, J
dc.contributor.authorLiu, XS
dc.contributor.authorLi, ZH
dc.contributor.authorWang, YY
dc.date.accessioned2017-11-01T00:19:27Z
dc.date.available2017-11-01T00:19:27Z
dc.date.issued2005
dc.date.modified2014-04-24T01:46:17Z
dc.identifier.issn0960-1317
dc.identifier.doi10.1088/0960-1317/15/3/027
dc.identifier.urihttp://hdl.handle.net/10072/58788
dc.description.abstractAn ultra-deep (40–120 µm) keyhole-free electrical isolation trench with an aspect ratio of more than 20:1 has been fabricated. The process combines DRIE (deep reactive ion etch), LPCVD insulating materials refilling and TMAH or KOH backside etching technologies. Employing multi-step DRIE with optimized etching conditions and a sacrificial polysilicon layer, the keyholes in trenches are prevented; as a result the mechanical strength and reliability of isolation trenches are improved. Electrical tests show that such an isolation trench can electrically isolate the MEMS structures effectively from each other and from on-chip detection circuits. The average resistance in the range of 0–100 V is more than 1012 Ω, and the breakdown voltage is above 205 V. This technology has been successfully employed in the fabrication of the monolithic integrated bulk micromachining MEMS gyroscope.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherInstitute of Physics Publishing Ltd.
dc.publisher.placeUnited Kingdom
dc.relation.ispartofstudentpublicationY
dc.relation.ispartofpagefrom636
dc.relation.ispartofpageto642
dc.relation.ispartofissue3
dc.relation.ispartofjournalJournal of Micromechanics and Microengineering
dc.relation.ispartofvolume15
dc.rights.retentionY
dc.subject.fieldofresearchMicroelectromechanical Systems (MEMS)
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchTechnology
dc.subject.fieldofresearchcode091306
dc.subject.fieldofresearchcode09
dc.subject.fieldofresearchcode10
dc.titleFabrication of keyhole-free ultra-deep high-aspect-ratio isolation trench and its applications
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.date.issued2005
gro.hasfulltextNo Full Text
gro.griffith.authorZhu, Yong


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