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  • Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O

    Author(s)
    Cheong, KY
    Dimitrijev, S
    Han, JS
    Harrison, HB
    Griffith University Author(s)
    Harrison, Barry B.
    Dimitrijev, Sima
    Year published
    2003
    Metadata
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    Abstract
    A systematic electrical and physical characterization of gate oxides on 4H-SiC, grown in diluted N2O at 1300 ì has been performed. Electrical characterization by the high-frequency C-V technique, conductance technique, and slow trap profiling method reveals that the densities of interface and near-interface traps, and the effective oxide charge for gate oxides grown in 10% N2O are the lowest, compared to gate oxides grown in 100% and 0.5% N2O. These results are supported by physical characterizations using x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. It has been shown that ...
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    A systematic electrical and physical characterization of gate oxides on 4H-SiC, grown in diluted N2O at 1300 ì has been performed. Electrical characterization by the high-frequency C-V technique, conductance technique, and slow trap profiling method reveals that the densities of interface and near-interface traps, and the effective oxide charge for gate oxides grown in 10% N2O are the lowest, compared to gate oxides grown in 100% and 0.5% N2O. These results are supported by physical characterizations using x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. It has been shown that carbon clusters, accumulated at the SiC-SiO2 interface, directly influence the roughness of the interface and the densities of the interface and near-interface traps.
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    Journal Title
    Journal of Applied Physics
    Volume
    93
    Issue
    9
    Publisher URI
    http://jap.aip.org/
    DOI
    https://doi.org/10.1063/1.1555696
    Subject
    Mathematical sciences
    Physical sciences
    Engineering
    Publication URI
    http://hdl.handle.net/10072/5905
    Collection
    • Journal articles

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