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  • Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

    Author(s)
    Afanas'ev, VV
    Stesmans, A
    Ciobanu, F
    Pensl, G
    Cheong, KY
    Dimitrijev, S
    Griffith University Author(s)
    Dimitrijev, Sima
    Cheong, Kuan Y.
    Year published
    2003
    Metadata
    Show full item record
    Abstract
    An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.
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    Journal Title
    Applied Physics Letters
    Volume
    82
    Issue
    4
    DOI
    https://doi.org/10.1063/1.1532103
    Subject
    Physical sciences
    Engineering
    Publication URI
    http://hdl.handle.net/10072/5906
    Collection
    • Journal articles

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