Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation
Author(s)
Afanas'ev, VV
Stesmans, A
Ciobanu, F
Pensl, G
Cheong, KY
Dimitrijev, S
Griffith University Author(s)
Year published
2003
Metadata
Show full item recordAbstract
An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.
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Journal Title
Applied Physics Letters
Volume
82
Issue
4
Subject
Physical sciences
Engineering