| dc.contributor.author | Afanas'ev, VV | |
| dc.contributor.author | Stesmans, A | |
| dc.contributor.author | Ciobanu, F | |
| dc.contributor.author | Pensl, G | |
| dc.contributor.author | Cheong, KY | |
| dc.contributor.author | Dimitrijev, S | |
| dc.date.accessioned | 2017-05-03T11:51:48Z | |
| dc.date.available | 2017-05-03T11:51:48Z | |
| dc.date.issued | 2003 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.doi | 10.1063/1.1532103 | |
| dc.identifier.uri | http://hdl.handle.net/10072/5906 | |
| dc.description.abstract | An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation. | |
| dc.description.peerreviewed | Yes | |
| dc.description.publicationstatus | Yes | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | American Institute of Physics | |
| dc.publisher.place | USA | |
| dc.relation.ispartofpagefrom | 568 | |
| dc.relation.ispartofpageto | 570 | |
| dc.relation.ispartofissue | 4 | |
| dc.relation.ispartofjournal | Applied Physics Letters | |
| dc.relation.ispartofvolume | 82 | |
| dc.subject.fieldofresearch | Physical sciences | |
| dc.subject.fieldofresearch | Engineering | |
| dc.subject.fieldofresearchcode | 51 | |
| dc.subject.fieldofresearchcode | 40 | |
| dc.title | Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation | |
| dc.type | Journal article | |
| dc.type.description | C1 - Articles | |
| dc.type.code | C - Journal Articles | |
| gro.date.issued | 2015-02-12T00:42:50Z | |
| gro.hasfulltext | No Full Text | |
| gro.griffith.author | Dimitrijev, Sima | |
| gro.griffith.author | Cheong, Kuan Y. | |
