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dc.contributor.authorAfanas'ev, VV
dc.contributor.authorStesmans, A
dc.contributor.authorCiobanu, F
dc.contributor.authorPensl, G
dc.contributor.authorCheong, KY
dc.contributor.authorDimitrijev, S
dc.date.accessioned2017-05-03T11:51:48Z
dc.date.available2017-05-03T11:51:48Z
dc.date.issued2003
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.1532103
dc.identifier.urihttp://hdl.handle.net/10072/5906
dc.description.abstractAn analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.publisher.placeUSA
dc.relation.ispartofpagefrom568
dc.relation.ispartofpageto570
dc.relation.ispartofissue4
dc.relation.ispartofjournalApplied Physics Letters
dc.relation.ispartofvolume82
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode40
dc.titleMechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.date.issued2015-02-12T00:42:50Z
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorCheong, Kuan Y.


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