• myGriffith
    • Staff portal
    • Contact Us⌄
      • Future student enquiries 1800 677 728
      • Current student enquiries 1800 154 055
      • International enquiries +61 7 3735 6425
      • General enquiries 07 3735 7111
      • Online enquiries
      • Staff phonebook
    View Item 
    •   Home
    • Griffith Research Online
    • Journal articles
    • View Item
    • Home
    • Griffith Research Online
    • Journal articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

  • All of Griffith Research Online
    • Communities & Collections
    • Authors
    • By Issue Date
    • Titles
  • This Collection
    • Authors
    • By Issue Date
    • Titles
  • Statistics

  • Most Popular Items
  • Statistics by Country
  • Most Popular Authors
  • Support

  • Contact us
  • FAQs
  • Admin login

  • Login
  • Channel-carrier mobility parameters for 4H SiC MOSFETs

    Author(s)
    Linewih, H
    Dimitrijev, S
    Cheong, KY
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2003
    Metadata
    Show full item record
    Abstract
    In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer ...
    View more >
    In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic.
    View less >
    Journal Title
    Microelectronics Reliability
    Volume
    43
    Publisher URI
    http://www.elsevier.com/wps/find/journaldescription.cws_home/274/description#description
    Copyright Statement
    © 2003 Elsevier : Reproduced in accordance with the copyright policy of the publisher : This journal is available online - use hypertext links.
    Subject
    Electrical and Electronic Engineering
    Publication URI
    http://hdl.handle.net/10072/5907
    Collection
    • Journal articles

    Footer

    Disclaimer

    • Privacy policy
    • Copyright matters
    • CRICOS Provider - 00233E
    • TEQSA: PRV12076

    Tagline

    • Gold Coast
    • Logan
    • Brisbane - Queensland, Australia
    First Peoples of Australia
    • Aboriginal
    • Torres Strait Islander