Channel-carrier mobility parameters for 4H SiC MOSFETs
Author(s)
Linewih, H
Dimitrijev, S
Cheong, KY
Griffith University Author(s)
Year published
2003
Metadata
Show full item recordAbstract
In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer ...
View more >In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic.
View less >
View more >In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic.
View less >
Journal Title
Microelectronics Reliability
Volume
43
Publisher URI
Copyright Statement
© 2003 Elsevier : Reproduced in accordance with the copyright policy of the publisher : This journal is available online - use hypertext links.
Subject
Electrical and Electronic Engineering