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dc.contributor.authorDimitrijev, Simaen_US
dc.contributor.authorJamet, Philippeen_US
dc.date.accessioned2017-05-03T11:51:33Z
dc.date.available2017-05-03T11:51:33Z
dc.date.issued2003en_US
dc.date.modified2007-03-15T21:42:42Z
dc.identifier.issn00262714en_US
dc.identifier.urihttp://hdl.handle.net/10072/5908
dc.description.abstractIn recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform. For semiconductor devices designed to operate in these harsh conditions, SiC offers an unmatched combination of electronic and physical properties. The availability of SiC wafers on a commercial basis has led to the demonstration of many types of metal-oxide semiconductor (MOS)-gated devices that exploit its unique properties. To which extent the potential of SiC power MOSFET can be utilized is a question of appropriate SiC polytype, device structure, MOS interface quality and maturity of the technology. This paper reviews the present status of the SiC power MOSFETs technology that is approaching commercialization. Emphasis is placed upon the impact of SiO2-SiC interface quality on the performance of SiC MOSFETs.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_AU
dc.languageEnglishen_US
dc.language.isoen_AU
dc.publisherPergamon-Elsevier Science Ltden_US
dc.publisher.placeUKen_US
dc.publisher.urihttp://www.elsevier.com/wps/find/journaldescription.cws_home/274/description#descriptionen_AU
dc.relation.ispartofpagefrom225en_US
dc.relation.ispartofpageto233en_US
dc.relation.ispartofjournalMicroelectronics Reliabilityen_US
dc.relation.ispartofvolume43en_US
dc.subject.fieldofresearchcode290902en_US
dc.titleAdvances in SiC power MOSFET technologyen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
gro.facultyGriffith Sciences, Griffith School of Engineeringen_US
gro.rights.copyright© 2003 Elsevier : Reproduced in accordance with the copyright policy of the publisher : This journal is available online - use hypertext links.en_US
gro.date.issued2003
gro.hasfulltextNo Full Text


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    Contains articles published by Griffith authors in scholarly journals.

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