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  • Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces

    Author(s)
    Cheong, KY
    Dimitrijev, S
    Han, J
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2002
    Metadata
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    Abstract
    The reasons for inferior electrical properties of nitric oxide (NO) annealed gate oxides compared to gate oxides directly grown in NO are investigated in this paper. Interface roughness is identified as one of the main issues. A significant improvement of the annealed gate oxides is achieved by introducing an initial nitridation step, prior to oxidation and NO annealing. With this additional step, a sandwich (nitridation-oxidation-nitridation) process is developed to improve the SiC-SiO2 interface without the need for lengthy and expensive direct growth in NO.The reasons for inferior electrical properties of nitric oxide (NO) annealed gate oxides compared to gate oxides directly grown in NO are investigated in this paper. Interface roughness is identified as one of the main issues. A significant improvement of the annealed gate oxides is achieved by introducing an initial nitridation step, prior to oxidation and NO annealing. With this additional step, a sandwich (nitridation-oxidation-nitridation) process is developed to improve the SiC-SiO2 interface without the need for lengthy and expensive direct growth in NO.
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    Journal Title
    Materials Science Forum
    Volume
    433-436
    Publisher URI
    http://www.scientific.net/MSF
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.433-436.583
    Subject
    Physical chemistry
    Materials engineering
    Publication URI
    http://hdl.handle.net/10072/5909
    Collection
    • Journal articles

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