Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces
Author(s)
Cheong, KY
Dimitrijev, S
Han, J
Griffith University Author(s)
Year published
2002
Metadata
Show full item recordAbstract
The reasons for inferior electrical properties of nitric oxide (NO) annealed gate oxides compared to gate oxides directly grown in NO are investigated in this paper. Interface roughness is identified as one of the main issues. A significant improvement of the annealed gate oxides is achieved by introducing an initial nitridation step, prior to oxidation and NO annealing. With this additional step, a sandwich (nitridation-oxidation-nitridation) process is developed to improve the SiC-SiO2 interface without the need for lengthy and expensive direct growth in NO.The reasons for inferior electrical properties of nitric oxide (NO) annealed gate oxides compared to gate oxides directly grown in NO are investigated in this paper. Interface roughness is identified as one of the main issues. A significant improvement of the annealed gate oxides is achieved by introducing an initial nitridation step, prior to oxidation and NO annealing. With this additional step, a sandwich (nitridation-oxidation-nitridation) process is developed to improve the SiC-SiO2 interface without the need for lengthy and expensive direct growth in NO.
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Journal Title
Materials Science Forum
Volume
433-436
Publisher URI
Subject
Physical chemistry
Materials engineering