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  • Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

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    Author(s)
    Cheong, KY
    Dimitrijev, S
    Han, JS
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2003
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    Abstract
    This paper investigates electron-hole generation in n-type MOS capacitors on 4H-SiC with the gate oxide directly grown in either 100% NO or 10% N2O. High-temperature capacitance-transient measurements were used to determine and compare the contributions of carrier generation in the bulk and at the SiO2-SiC interface. The effective generation rate in the bulk is similar in the MOS capacitors with either type of gate oxide, whereas the effective surface-generation rate is much lower in the case of oxides grown in 100% NO. Moreover, the effective surface-generation rate in these oxides is reduced to the level that is comparable ...
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    This paper investigates electron-hole generation in n-type MOS capacitors on 4H-SiC with the gate oxide directly grown in either 100% NO or 10% N2O. High-temperature capacitance-transient measurements were used to determine and compare the contributions of carrier generation in the bulk and at the SiO2-SiC interface. The effective generation rate in the bulk is similar in the MOS capacitors with either type of gate oxide, whereas the effective surface-generation rate is much lower in the case of oxides grown in 100% NO. Moreover, the effective surface-generation rate in these oxides is reduced to the level that is comparable to the effective bulk-generation rate. This result demonstrates the high quality of MOS capacitors with the gate oxide directly grown in 100% NO.
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    Journal Title
    IEEE Transactions on Electron Devices
    Volume
    50
    Issue
    6
    Publisher URI
    http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
    DOI
    https://doi.org/10.1109/TED.2003.813346
    Copyright Statement
    © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
    Subject
    Electrical and Electronic Engineering
    Publication URI
    http://hdl.handle.net/10072/5911
    Collection
    • Journal articles

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