Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

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Author(s)
Cheong, KY
Dimitrijev, S
Han, JS
Griffith University Author(s)
Year published
2003
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This paper investigates electron-hole generation in n-type MOS capacitors on 4H-SiC with the gate oxide directly grown in either 100% NO or 10% N2O. High-temperature capacitance-transient measurements were used to determine and compare the contributions of carrier generation in the bulk and at the SiO2-SiC interface. The effective generation rate in the bulk is similar in the MOS capacitors with either type of gate oxide, whereas the effective surface-generation rate is much lower in the case of oxides grown in 100% NO. Moreover, the effective surface-generation rate in these oxides is reduced to the level that is comparable ...
View more >This paper investigates electron-hole generation in n-type MOS capacitors on 4H-SiC with the gate oxide directly grown in either 100% NO or 10% N2O. High-temperature capacitance-transient measurements were used to determine and compare the contributions of carrier generation in the bulk and at the SiO2-SiC interface. The effective generation rate in the bulk is similar in the MOS capacitors with either type of gate oxide, whereas the effective surface-generation rate is much lower in the case of oxides grown in 100% NO. Moreover, the effective surface-generation rate in these oxides is reduced to the level that is comparable to the effective bulk-generation rate. This result demonstrates the high quality of MOS capacitors with the gate oxide directly grown in 100% NO.
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View more >This paper investigates electron-hole generation in n-type MOS capacitors on 4H-SiC with the gate oxide directly grown in either 100% NO or 10% N2O. High-temperature capacitance-transient measurements were used to determine and compare the contributions of carrier generation in the bulk and at the SiO2-SiC interface. The effective generation rate in the bulk is similar in the MOS capacitors with either type of gate oxide, whereas the effective surface-generation rate is much lower in the case of oxides grown in 100% NO. Moreover, the effective surface-generation rate in these oxides is reduced to the level that is comparable to the effective bulk-generation rate. This result demonstrates the high quality of MOS capacitors with the gate oxide directly grown in 100% NO.
View less >
Journal Title
IEEE Transactions on Electron Devices
Volume
50
Issue
6
Copyright Statement
© 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Subject
Electrical and Electronic Engineering