3C-SiC/AlN Distributed Bragg Reflector for GaN-based LEDs grown on large diameter silicon wafers
Author(s)
Massoubre, David
Wang, Li
Chu, R
Guo, J. D.
Chai, Jessica
Walker, Glenn Michael
Hold, Leonie Katharina
Guo, A.
Iacopi, Alan Victor
Griffith University Author(s)
Year published
2013
Metadata
Show full item recordAbstract
The cost of Light Emitting Diodes (LEDs) is still impairing their sale for general lighting. In order to reduce the LED’s fabrication cost, the growth of efficient Gallium-Nitride (GaN)- based LEDs on large silicon (Si) wafers has consequently become an important research focus for the solid-state lighting industry. We are proposing here the use of thin-layers of silicon carbide (3C-SiC) with the aim not only to improve the nitride growth but also to enhance the light output from GaN-LEDs on Si. SiC has a lower lattice mismatch to GaN (3%) than Si (17%) which makes it more suitable for the integration of GaN-LEDs on Si ...
View more >The cost of Light Emitting Diodes (LEDs) is still impairing their sale for general lighting. In order to reduce the LED’s fabrication cost, the growth of efficient Gallium-Nitride (GaN)- based LEDs on large silicon (Si) wafers has consequently become an important research focus for the solid-state lighting industry. We are proposing here the use of thin-layers of silicon carbide (3C-SiC) with the aim not only to improve the nitride growth but also to enhance the light output from GaN-LEDs on Si. SiC has a lower lattice mismatch to GaN (3%) than Si (17%) which makes it more suitable for the integration of GaN-LEDs on Si wafers1. Furthermore, its large refractive index and low residual absorption make it an ideal material to develop photonic structures with the goal of reducing parasitic light absorption from the Si substrate.
View less >
View more >The cost of Light Emitting Diodes (LEDs) is still impairing their sale for general lighting. In order to reduce the LED’s fabrication cost, the growth of efficient Gallium-Nitride (GaN)- based LEDs on large silicon (Si) wafers has consequently become an important research focus for the solid-state lighting industry. We are proposing here the use of thin-layers of silicon carbide (3C-SiC) with the aim not only to improve the nitride growth but also to enhance the light output from GaN-LEDs on Si. SiC has a lower lattice mismatch to GaN (3%) than Si (17%) which makes it more suitable for the integration of GaN-LEDs on Si wafers1. Furthermore, its large refractive index and low residual absorption make it an ideal material to develop photonic structures with the goal of reducing parasitic light absorption from the Si substrate.
View less >
Conference Title
ANFF Research Showcase 2013
Subject
Photonics, Optoelectronics and Optical Communications