Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates
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The transfer printing of 2 孭thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150?nm (ᱴ?nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 נ16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486?nm with a forward-directed optical output power up to 80?嗠(355 mW/cm2) when operated at a current density of 20?A/cm2.
Applied Physics Letters
© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Vol.103 (253302), pp.1-4 and may be found at http://dx.doi.org/10.1063/1.4851875.
Photonics, Optoelectronics and Optical Communications