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  • Polytype Control in 6H-SiC Grown via Sublimation Method

    Author(s)
    Li, Xianxiang
    Jiang, Shouzheng
    Hu, Xiaobu
    Dong, Jie
    Li, Juan
    Chen, Xiufang
    Wang, Li
    Xu, Xiangang
    Jiang, Minhua
    Griffith University Author(s)
    Wang, Li
    Year published
    2006
    Metadata
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    Abstract
    6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250î6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250î
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    Journal Title
    Materials Science Forum
    Volume
    527-529
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.527-529.95
    Copyright Statement
    Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
    Subject
    Surfaces and Structural Properties of Condensed Matter
    Physical Chemistry (incl. Structural)
    Materials Engineering
    Publication URI
    http://hdl.handle.net/10072/60939
    Collection
    • Journal articles

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