Polytype Control in 6H-SiC Grown via Sublimation Method
Author(s)
Li, Xianxiang
Jiang, Shouzheng
Hu, Xiaobu
Dong, Jie
Li, Juan
Chen, Xiufang
Wang, Li
Xu, Xiangang
Jiang, Minhua
Griffith University Author(s)
Year published
2006
Metadata
Show full item recordAbstract
6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250î6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250î
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Journal Title
Materials Science Forum
Volume
527-529
Copyright Statement
Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
Subject
Surfaces and Structural Properties of Condensed Matter
Physical Chemistry (incl. Structural)
Materials Engineering