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dc.contributor.authorGupta, B.
dc.contributor.authorNotarianni, M.
dc.contributor.authorMishra, Neeraj
dc.contributor.authorShafiei, M.
dc.contributor.authorIacopi, Francesca
dc.contributor.authorMotta, N.
dc.date.accessioned2018-09-05T06:47:35Z
dc.date.available2018-09-05T06:47:35Z
dc.date.issued2014
dc.date.modified2014-08-05T23:03:51Z
dc.identifier.issn00086223en_US
dc.identifier.doi10.1016/j.carbon.2013.11.035en_US
dc.identifier.urihttp://hdl.handle.net/10072/61900
dc.description.abstractThe growth of graphene on SiC/Si substrates is an appealing alternative to the growth on bulk SiC for cost reduction and to better integrate the material with Si based electronic devices. In this paper, we present a thorough in situ study of the growth of epitaxial graphene on 3C SiC (1 1 1)/Si (1 1 1) substrates via high temperature annealing (ranging from 1125 to 1375 é in ultra high vacuum (UHV). The quality and number of graphene layers have been investigated by using X-ray Photoelectron Spectroscopy (XPS), while the surface characterization have been studied by Scanning Tunnelling Microscopy (STM). Ex-situ Raman spectroscopy measurements confirm our findings, which demonstrate the exponential dependence of the number of graphene layers on the annealing temperature.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_US
dc.languageEnglishen_US
dc.publisherPergamon Pressen_US
dc.publisher.placeUnited Kingdomen_US
dc.relation.ispartofstudentpublicationYen_US
dc.relation.ispartofpagefrom563en_US
dc.relation.ispartofpageto572en_US
dc.relation.ispartofjournalCarbonen_US
dc.relation.ispartofvolume68en_US
dc.rights.retentionYen_US
dc.subject.fieldofresearchSurfaces and Structural Properties of Condensed Matteren_US
dc.subject.fieldofresearchcode020406en_US
dc.titleEvolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHVen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
dc.description.versionPost-printen_US
gro.rights.copyright© 2014 Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International Licence (http://creativecommons.org/licenses/by-nc-nd/4.0/) which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited.en_US
gro.hasfulltextFull Text
gro.griffith.authorMishra, Neeraj
gro.griffith.authorIacopi, Francesca


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