Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC
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The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in  orientation, and longitudinal gauge factor in  orientation were found to be 5.8, 5.2, and 30.3, respectively. The fundamental piezoresistive coefficients p11, p12, and p44 of p-type 3C-SiC were obtained to be 1.5 10 11 Pa 1, 1.4 10 11 Pa 1, and 18.1 10 11 Pa 1, respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors.
Applied Physics Letters
© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in 104, 111905 (2014) and may be found at http://dx.doi.org/10.1063/1.4869151.