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dc.contributor.authorMishra, Neeraj
dc.contributor.authorHold, Leonie
dc.contributor.authorIacopi, Alan
dc.contributor.authorGupta, B.
dc.contributor.authorMotta, N.
dc.contributor.authorIacopi, Francesca
dc.date.accessioned2017-05-03T15:30:45Z
dc.date.available2017-05-03T15:30:45Z
dc.date.issued2014
dc.identifier.issn00218979
dc.identifier.doi10.1063/1.4879237
dc.identifier.urihttp://hdl.handle.net/10072/62027
dc.description.abstractThe surface of cubic silicon carbide (3C-SiC) hetero-epitaxial films grown on the (111) surface of silicon is a promising template for the subsequent epitaxial growth of III-V semiconductor layers and graphene. We investigate growth and post-growth approaches for controlling the surface roughness of epitaxial SiC to produce an optimal template. We first explore 3C-SiC growth on various degrees of offcut Si(111) substrates, although we observe that the SiC roughness tends to worsen as the degree of offcut increases. Hence we focus on post-growth approaches available on full wafers, comparing chemical mechanical polishing (CMP) and a novel plasma smoothening process. The CMP leads to a dramatic improvement, bringing the SiC surface roughness down to sub-nanometer level, though removing about 200?nm of the SiC layer. On the other hand, our proposed HCl plasma process appears very effective in smoothening selectively the sharpest surface topography, leading up to 30% improvement in SiC roughness with only about 50?nm thickness loss. We propose a simple physical model explaining the action of the plasma smoothening.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent672793 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationY
dc.relation.ispartofpagefrom203501-1
dc.relation.ispartofpageto203501-8
dc.relation.ispartofjournalJournal of Applied Physics
dc.relation.ispartofvolume115
dc.rights.retentionY
dc.subject.fieldofresearchSurfaces and Structural Properties of Condensed Matter
dc.subject.fieldofresearchMathematical Sciences
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode020406
dc.subject.fieldofresearchcode01
dc.subject.fieldofresearchcode02
dc.subject.fieldofresearchcode09
dc.titleControlling the surface roughness of epitaxial SiC on silicon
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, School of Natural Sciences
gro.rights.copyright© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Vol. 115, pp. 203501-1-203501-8 and may be found at dx.doi.org/10.1063/1.4879237.
gro.date.issued2015-01-23T05:24:42Z
gro.hasfulltextFull Text
gro.griffith.authorIacopi, Alan V.
gro.griffith.authorHold, Leonie K.
gro.griffith.authorIacopi, Francesca
gro.griffith.authorMishra, Neeraj


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