Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

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Author(s)
Tanner, Philip
Dimitrijev, Sima
Moghadam, Hamid Amini
Aminbeidokhti, Amirhossein
Han, Jisheng
Year published
2014
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Show full item recordAbstract
Power MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation.Power MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation.
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Journal Title
Materials Science Forum
Volume
778-780
Copyright Statement
© 2014 Trans Tech Publications. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
Subject
Physical chemistry
Materials engineering