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  • Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

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    Accepted Manuscript (AM)
    Author(s)
    Tanner, Philip
    Dimitrijev, Sima
    Moghadam, Hamid Amini
    Aminbeidokhti, Amirhossein
    Han, Jisheng
    Griffith University Author(s)
    Dimitrijev, Sima
    Tanner, Philip G.
    Year published
    2014
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    Abstract
    Power MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation.Power MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation.
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    Journal Title
    Materials Science Forum
    Volume
    778-780
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.778-780.997
    Copyright Statement
    © 2014 Trans Tech Publications. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
    Subject
    Physical chemistry
    Materials engineering
    Publication URI
    http://hdl.handle.net/10072/62166
    Collection
    • Journal articles

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