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dc.contributor.authorTanner, Philip
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorMoghadam, Hamid Amini
dc.contributor.authorAminbeidokhti, Amirhossein
dc.contributor.authorHan, Jisheng
dc.contributor.editorOkumura, H
dc.contributor.editorHarima, H
dc.contributor.editorKimoto, T
dc.contributor.editorYoshimoto, M
dc.contributor.editorWatanabe, H
dc.contributor.editorHatayama, T
dc.contributor.editorMatsuura, H
dc.contributor.editorFunaki, T
dc.contributor.editorSano, Y
dc.date.accessioned2017-10-10T00:11:34Z
dc.date.available2017-10-10T00:11:34Z
dc.date.issued2014
dc.date.modified2014-08-11T00:47:49Z
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.778-780.997
dc.identifier.urihttp://hdl.handle.net/10072/62166
dc.description.abstractPower MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherTrans Tech Publications
dc.publisher.placeSwitzerland
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom997
dc.relation.ispartofpageto1000
dc.relation.ispartofjournalMaterials Science Forum
dc.relation.ispartofvolume778-780
dc.rights.retentionY
dc.subject.fieldofresearchPhysical chemistry
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchcode3406
dc.subject.fieldofresearchcode4016
dc.titleSelection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dc.description.versionAccepted Manuscript (AM)
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 2014 Trans Tech Publications. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorTanner, Philip G.


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