dc.contributor.author | Tanner, Philip | |
dc.contributor.author | Dimitrijev, Sima | |
dc.contributor.author | Moghadam, Hamid Amini | |
dc.contributor.author | Aminbeidokhti, Amirhossein | |
dc.contributor.author | Han, Jisheng | |
dc.contributor.editor | Okumura, H | |
dc.contributor.editor | Harima, H | |
dc.contributor.editor | Kimoto, T | |
dc.contributor.editor | Yoshimoto, M | |
dc.contributor.editor | Watanabe, H | |
dc.contributor.editor | Hatayama, T | |
dc.contributor.editor | Matsuura, H | |
dc.contributor.editor | Funaki, T | |
dc.contributor.editor | Sano, Y | |
dc.date.accessioned | 2017-10-10T00:11:34Z | |
dc.date.available | 2017-10-10T00:11:34Z | |
dc.date.issued | 2014 | |
dc.date.modified | 2014-08-11T00:47:49Z | |
dc.identifier.issn | 0255-5476 | |
dc.identifier.doi | 10.4028/www.scientific.net/MSF.778-780.997 | |
dc.identifier.uri | http://hdl.handle.net/10072/62166 | |
dc.description.abstract | Power MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation. | |
dc.description.peerreviewed | Yes | |
dc.description.publicationstatus | Yes | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Trans Tech Publications | |
dc.publisher.place | Switzerland | |
dc.relation.ispartofstudentpublication | N | |
dc.relation.ispartofpagefrom | 997 | |
dc.relation.ispartofpageto | 1000 | |
dc.relation.ispartofjournal | Materials Science Forum | |
dc.relation.ispartofvolume | 778-780 | |
dc.rights.retention | Y | |
dc.subject.fieldofresearch | Physical chemistry | |
dc.subject.fieldofresearch | Materials engineering | |
dc.subject.fieldofresearchcode | 3406 | |
dc.subject.fieldofresearchcode | 4016 | |
dc.title | Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs | |
dc.type | Journal article | |
dc.type.description | C1 - Articles | |
dc.type.code | C - Journal Articles | |
dc.description.version | Accepted Manuscript (AM) | |
gro.faculty | Griffith Sciences, Griffith School of Engineering | |
gro.rights.copyright | © 2014 Trans Tech Publications. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version. | |
gro.hasfulltext | Full Text | |
gro.griffith.author | Dimitrijev, Sima | |
gro.griffith.author | Tanner, Philip G. | |