Image-containing InGaN LEDs for pattern-transfer applications
MetadataShow full item record
We report a simple process which enables the fabrication of a single light-emitting diode with spatially patterned emission. The patterning is based on the selective passivation of the p-doped GaN with a CHF(3) plasma treatment.
ageImage--containing InGaNInGaNLEDs for LEDs patternpattern--transfer applicationstransfer applications
© 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Photonics, Optoelectronics and Optical Communications