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  • Image-containing InGaN LEDs for pattern-transfer applications

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    86234_1.pdf (253.8Kb)
    Author(s)
    Massoubre, David
    Guilhabert, Benoit
    Gong, Zheng
    Watson, Ian M.
    Gu, Erdan
    Dawson, M.D.
    Griffith University Author(s)
    Massoubre, David
    Year published
    2010
    Metadata
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    Abstract
    We report a simple process which enables the fabrication of a single light-emitting diode with spatially patterned emission. The patterning is based on the selective passivation of the p-doped GaN with a CHF(3) plasma treatment.We report a simple process which enables the fabrication of a single light-emitting diode with spatially patterned emission. The patterning is based on the selective passivation of the p-doped GaN with a CHF(3) plasma treatment.
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    Conference Title
    ageImage--containing InGaNInGaNLEDs for LEDs patternpattern--transfer applicationstransfer applications
    Publisher URI
    http://www.photonicssociety.org/conferences
    DOI
    https://doi.org/10.1109/PHOTONICS.2010.5699054
    Copyright Statement
    © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
    Subject
    Photonics, Optoelectronics and Optical Communications
    Publication URI
    http://hdl.handle.net/10072/62278
    Collection
    • Conference outputs

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