Image-containing InGaN LEDs for pattern-transfer applications
Abstract
We report a simple process which enables the fabrication of a single light-emitting diode with spatially patterned emission. The patterning is based on the selective passivation of the p-doped GaN with a CHF(3) plasma treatment.
Conference Title
ageImage--containing InGaNInGaNLEDs for LEDs patternpattern--transfer applicationstransfer applications
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Subject
Photonics, Optoelectronics and Optical Communications