Fabrication of planar GaN-based micro-pixel light emitting diode arrays
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We report a new processing approach which enables the fabrication of planar GaN-based micro-pixel LED arrays. This process is based on selective passivation of the p-doped GaN surface by a CHF(3) plasma treatment.
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS
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Photonics, Optoelectronics and Optical Communications