Individually-addressed planar nanoscale InGaN-based light emitters

We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.

Conference Title

25th IEEE Photonics Conference (IPC)

Publisher URI

http://www.ipc-ieee.org/

DOI

https://doi.org/10.1109/IPCon.2012.6358842

Copyright Statement

© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Subject

Photonics, Optoelectronics and Optical Communications

Publication URI

http://hdl.handle.net/10072/62296

Collection

Conference outputs