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  • Individually-addressed planar nanoscale InGaN-based light emitters

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    86263_1.pdf (141.7Kb)
    Author(s)
    Massoubre, David
    Edwards, P. R.
    Xie, E. Y.
    Richardson, Elliot
    Watson, Ian M.
    Gu, Erdan
    Martin, R. W.
    Dawson, Martin D.
    Griffith University Author(s)
    Massoubre, David
    Year published
    2012
    Metadata
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    Abstract
    We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
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    Conference Title
    25th IEEE Photonics Conference (IPC)
    Publisher URI
    http://www.ipc-ieee.org/
    DOI
    https://doi.org/10.1109/IPCon.2012.6358842
    Copyright Statement
    © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
    Subject
    Photonics, Optoelectronics and Optical Communications
    Publication URI
    http://hdl.handle.net/10072/62296
    Collection
    • Conference outputs

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