Individually-addressed planar nanoscale InGaN-based light emitters
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We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
25th IEEE Photonics Conference (IPC)
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Photonics, Optoelectronics and Optical Communications