Show simple item record

dc.contributor.authorDate, Len_US
dc.contributor.authorRittersma, ZMen_US
dc.contributor.authorMassoubre, Daviden_US
dc.contributor.authorPonomarev, Yen_US
dc.contributor.authorRoozeboom, Fen_US
dc.contributor.authorPique, Den_US
dc.contributor.authorvan-Autryve, Len_US
dc.contributor.authorVan Elshocht, Sen_US
dc.contributor.authorCaymax, Men_US
dc.date.accessioned2013-05-29en_US
dc.date.accessioned2014-08-15T01:54:56Z
dc.date.accessioned2017-03-02T00:24:49Z
dc.date.available2017-03-02T00:24:49Z
dc.date.issued2003en_US
dc.date.modified2014-08-15T01:54:56Z
dc.identifier.isbn0-7803-7673-0en_US
dc.identifier.doi10.1109/ASMC.2003.1194482en_US
dc.identifier.urihttp://hdl.handle.net/10072/62298
dc.description.abstractElectrical properties of MOS capacitors using MOCVD HfO2 as gate dielectric have been investigated. A 900 degreesC Is activation anneal of Ph-doped 680 degreesC-RTCVD demonstrated a good compatibility with high-k layers. The best MOS capacitor is obtained with EOT=1.93 nm and Jg=1.6E-04 A/cm(2) at \V-FB-1\ which is > 2 orders of magnitude lower than SiO2 With Poly-Si gate. A minimal degradation of leakage current after 900 degreesC activation anneal and low effect of temperature dependence reveal the thermal stability of MOCVD HfO2 gate stack. Nevertheless, upon 1000 degreesC activation anneal only the LPCVD poly resulted in working MOS capacitor. The found leakage current was 2 order of magnitude higher compared to a 900 degreesC activation anneal.en_US
dc.description.peerreviewedNoen_US
dc.description.publicationstatusYesen_US
dc.format.extent352128 bytes
dc.format.mimetypeapplication/pdf
dc.publisherIEEEen_US
dc.publisher.placeUSen_US
dc.relation.ispartofconferencename14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (ASMC 2003)en_US
dc.relation.ispartofconferencetitleElectrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applicationsen_US
dc.relation.ispartofdatefrom2003-03-31en_US
dc.relation.ispartofdateto2003-04-01en_US
dc.relation.ispartoflocationMunich, Germanyen_US
dc.subject.fieldofresearchPhotonics, Optoelectronics and Optical Communicationsen_US
dc.subject.fieldofresearchcode020504en_US
dc.titleElectrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applicationsen_US
dc.typeConference output
dc.type.descriptionConference Publications (Extract Paper)en_US
dc.type.codee3xen_US
gro.facultyOtheren_US
gro.rights.copyright© 2003 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
gro.hasfulltextFull Text


Files in this item

This item appears in the following Collection(s)

  • Conference outputs
    Contains papers delivered by Griffith authors at national and international conferences.

Show simple item record