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dc.contributor.authorDate, L
dc.contributor.authorRittersma, ZM
dc.contributor.authorMassoubre, David
dc.contributor.authorPonomarev, Y
dc.contributor.authorRoozeboom, F
dc.contributor.authorPique, D
dc.contributor.authorvan-Autryve, L
dc.contributor.authorVan Elshocht, S
dc.contributor.authorCaymax, M
dc.date.accessioned2013-05-29
dc.date.accessioned2014-08-15T01:54:56Z
dc.date.accessioned2017-03-02T00:24:49Z
dc.date.available2017-03-02T00:24:49Z
dc.date.issued2003
dc.date.modified2014-08-15T01:54:56Z
dc.identifier.isbn0-7803-7673-0
dc.identifier.doi10.1109/ASMC.2003.1194482
dc.identifier.urihttp://hdl.handle.net/10072/62298
dc.description.abstractElectrical properties of MOS capacitors using MOCVD HfO2 as gate dielectric have been investigated. A 900 degreesC Is activation anneal of Ph-doped 680 degreesC-RTCVD demonstrated a good compatibility with high-k layers. The best MOS capacitor is obtained with EOT=1.93 nm and Jg=1.6E-04 A/cm(2) at \V-FB-1\ which is > 2 orders of magnitude lower than SiO2 With Poly-Si gate. A minimal degradation of leakage current after 900 degreesC activation anneal and low effect of temperature dependence reveal the thermal stability of MOCVD HfO2 gate stack. Nevertheless, upon 1000 degreesC activation anneal only the LPCVD poly resulted in working MOS capacitor. The found leakage current was 2 order of magnitude higher compared to a 900 degreesC activation anneal.
dc.description.peerreviewedNo
dc.description.publicationstatusYes
dc.format.extent352128 bytes
dc.format.mimetypeapplication/pdf
dc.publisherIEEE
dc.publisher.placeUS
dc.relation.ispartofconferencename14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (ASMC 2003)
dc.relation.ispartofconferencetitleElectrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
dc.relation.ispartofdatefrom2003-03-31
dc.relation.ispartofdateto2003-04-01
dc.relation.ispartoflocationMunich, Germany
dc.subject.fieldofresearchPhotonics, Optoelectronics and Optical Communications
dc.subject.fieldofresearchcode020504
dc.titleElectrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
dc.typeConference output
dc.type.descriptionE3 - Conferences (Extract Paper)
dc.type.codee3x
gro.facultyOther
gro.rights.copyright© 2003 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
gro.hasfulltextFull Text
gro.griffith.authorMassoubre, David


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