Maskless Fabrication of GaN-Based Light-Emitting Diodes
Abstract
A versatile maskless process flow was developed to fabricate a GaN-based individually-addressable LED array. This new fabrication approach combines CMOS-controlled micro-LED writing and silver nanoparticle inkjet printing. An array filling factor of 99% was achieved.
Conference Title
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY
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Copyright Statement
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Subject
Photonics, Optoelectronics and Optical Communications