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  • Impact of interface traps on current–voltage characteristics of 4H–SiC Schottky-barrier diodes

    Author(s)
    Moghadam, Hamid Amini
    Dimitrijev, Sima
    Han, Jisheng
    Griffith University Author(s)
    Dimitrijev, Sima
    Amini Moghadam, Hamid
    Year published
    2014
    Metadata
    Show full item record
    Abstract
    This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I-V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I-V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I-V characteristics as their energy level falls ...
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    This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I-V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I-V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I-V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.
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    Journal Title
    Materials Science Forum
    Volume
    778-780
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.778-780.710
    Copyright Statement
    Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the authors for more information.
    Subject
    Physical chemistry
    Microelectronics
    Materials engineering
    Publication URI
    http://hdl.handle.net/10072/62441
    Collection
    • Journal articles

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