Impact of interface traps on current–voltage characteristics of 4H–SiC Schottky-barrier diodes
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This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I-V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I-V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I-V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.
Materials Science Forum
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Microelectronics and Integrated Circuits