Impact of interface traps on current–voltage characteristics of 4H–SiC Schottky-barrier diodes
Author(s)
Moghadam, Hamid Amini
Dimitrijev, Sima
Han, Jisheng
Year published
2014
Metadata
Show full item recordAbstract
This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I-V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I-V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I-V characteristics as their energy level falls ...
View more >This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I-V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I-V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I-V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.
View less >
View more >This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I-V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I-V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I-V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.
View less >
Journal Title
Materials Science Forum
Volume
778-780
Copyright Statement
Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the authors for more information.
Subject
Physical chemistry
Microelectronics
Materials engineering