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dc.contributor.authorMoghadam, Hamid Amini
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorHan, Jisheng
dc.contributor.editorOkumura, H
dc.contributor.editorHarima, H
dc.contributor.editorKimoto, T
dc.contributor.editorYoshimoto, M
dc.contributor.editorWatanabe, H
dc.contributor.editorHatayama, T
dc.contributor.editorMatsuura, H
dc.contributor.editorFunaki, T
dc.contributor.editorSano, Y
dc.date.accessioned2017-05-03T16:09:03Z
dc.date.available2017-05-03T16:09:03Z
dc.date.issued2014
dc.date.modified2014-08-19T04:39:02Z
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.778-780.710
dc.identifier.urihttp://hdl.handle.net/10072/62441
dc.description.abstractThis paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I-V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I-V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I-V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherTrans Tech Publications
dc.publisher.placeSwitzerland
dc.relation.ispartofstudentpublicationY
dc.relation.ispartofpagefrom710
dc.relation.ispartofpageto713
dc.relation.ispartofjournalMaterials Science Forum
dc.relation.ispartofvolume778-780
dc.rights.retentionY
dc.subject.fieldofresearchMicroelectronics and Integrated Circuits
dc.subject.fieldofresearchPhysical Chemistry (incl. Structural)
dc.subject.fieldofresearchMaterials Engineering
dc.subject.fieldofresearchcode090604
dc.subject.fieldofresearchcode0306
dc.subject.fieldofresearchcode0912
dc.titleImpact of interface traps on current–voltage characteristics of 4H–SiC Schottky-barrier diodes
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.rights.copyrightSelf-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the authors for more information.
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorHan, Jisheng
gro.griffith.authorAmini Moghadam, Hamid


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