Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors
Author(s)
Le Du, M.
Massoubre, David
Harmand, J. -C.
Oudar, J.-L.
Griffith University Author(s)
Year published
2006
Metadata
Show full item recordAbstract
Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK(-1)cm(-1). These results illustrate a ...
View more >Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK(-1)cm(-1). These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers.
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View more >Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK(-1)cm(-1). These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers.
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Journal Title
Electronics Letters
Volume
42
Issue
18
Subject
Condensed Matter Physics not elsewhere classified
Artificial Intelligence and Image Processing
Electrical and Electronic Engineering
Communications Technologies