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  • Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors

    Author(s)
    Le Du, M.
    Massoubre, David
    Harmand, J. -C.
    Oudar, J.-L.
    Griffith University Author(s)
    Massoubre, David
    Year published
    2006
    Metadata
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    Abstract
    Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK(-1)cm(-1). These results illustrate a ...
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    Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK(-1)cm(-1). These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers.
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    Journal Title
    Electronics Letters
    Volume
    42
    Issue
    18
    DOI
    https://doi.org/10.1049/el:20062192
    Subject
    Condensed Matter Physics not elsewhere classified
    Artificial Intelligence and Image Processing
    Electrical and Electronic Engineering
    Communications Technologies
    Publication URI
    http://hdl.handle.net/10072/63125
    Collection
    • Journal articles

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