A planar fractal micro‑transformer with air core and hilbert curve

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Author(s)
Zhu, Yong
Khan, Fahimullah
Lu, Junwei
Dao, Dzung Viet
Year published
2015
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In this paper, a novel MEMS-based planar fractal transformer is presented. Space-filling property of Hilbert curve is exploited for the miniaturization of integrated transformers. Compared to traditional spiral transformer, the fractal Hilbert transformer requires only one metal layer and no interconnection vias or cross-overs, thereby reducing micro-fabrication complexity, EMI interference and resistive loss in the cross-overs. The transformer is implemented in a low-cost MetalMUMPs standard process. The transformer is coreless and the silicon underneath the primary and secondary coils is removed to mitigate the parasitic ...
View more >In this paper, a novel MEMS-based planar fractal transformer is presented. Space-filling property of Hilbert curve is exploited for the miniaturization of integrated transformers. Compared to traditional spiral transformer, the fractal Hilbert transformer requires only one metal layer and no interconnection vias or cross-overs, thereby reducing micro-fabrication complexity, EMI interference and resistive loss in the cross-overs. The transformer is implemented in a low-cost MetalMUMPs standard process. The transformer is coreless and the silicon underneath the primary and secondary coils is removed to mitigate the parasitic capacitance. The dc resistance of the transformer is 0.78 O, and the primary inductance of 9.3 nH has been obtained at 30 MHz. The quality factor of the transformer at 60 MHz is 1.6 and the total area of the transformer is 0.27 mm2. The obtained inductance density of 35 nH/mm2 is better than other air core transformers thus far in the literature.
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View more >In this paper, a novel MEMS-based planar fractal transformer is presented. Space-filling property of Hilbert curve is exploited for the miniaturization of integrated transformers. Compared to traditional spiral transformer, the fractal Hilbert transformer requires only one metal layer and no interconnection vias or cross-overs, thereby reducing micro-fabrication complexity, EMI interference and resistive loss in the cross-overs. The transformer is implemented in a low-cost MetalMUMPs standard process. The transformer is coreless and the silicon underneath the primary and secondary coils is removed to mitigate the parasitic capacitance. The dc resistance of the transformer is 0.78 O, and the primary inductance of 9.3 nH has been obtained at 30 MHz. The quality factor of the transformer at 60 MHz is 1.6 and the total area of the transformer is 0.27 mm2. The obtained inductance density of 35 nH/mm2 is better than other air core transformers thus far in the literature.
View less >
Journal Title
Microsystem Technologies
Copyright Statement
© 2014 Springer Berlin Heidelberg. This is an electronic version of an article published in Microsystem Technologies, August 2015, Volume 21, Issue 8, pp 1691–1695. Microsystem Technologies is available online at: http://link.springer.com/ with the open URL of your article.
Subject
Microelectronics
Microelectromechanical systems (MEMS)
Communications engineering
Nanotechnology