RF MEMS switches for smart antennas
View/ Open
File version
Accepted Manuscript (AM)
Author(s)
Pal, Jitendra
Zhu, Yong
Lu, Junwei
Dzung, Viet Dao
Khan, Fahimullah
Year published
2015
Metadata
Show full item recordAbstract
In this paper novel V-shaped and Z-shaped thermally actuated radio frequency (RF) MicroElectroMechanical Systems (MEMS) switches are designed and fabricated for the application of smart antennas. The switches are driven by a metal electrothermal actuator, which is able to generate large displacement and high contact force at lower temperatures. The MEMS switches utilizing the parallel beam actuator achieved 8 μm displacement. RF performances are improved by suspending the switching structures 25 μm above the substrate, thereby reducing the loss in the substrate. ON state insertion loss of −0.42 dB at 10 GHz, OFF state isolation ...
View more >In this paper novel V-shaped and Z-shaped thermally actuated radio frequency (RF) MicroElectroMechanical Systems (MEMS) switches are designed and fabricated for the application of smart antennas. The switches are driven by a metal electrothermal actuator, which is able to generate large displacement and high contact force at lower temperatures. The MEMS switches utilizing the parallel beam actuator achieved 8 μm displacement. RF performances are improved by suspending the switching structures 25 μm above the substrate, thereby reducing the loss in the substrate. ON state insertion loss of −0.42 dB at 10 GHz, OFF state isolation of −40 dB at 10 GHz and return loss better than of −20 dB at 10 GHz for bidirectional Z-shaped thermally actuated RF MEMS switch are achieved on the low resistivity silicon substrate.
View less >
View more >In this paper novel V-shaped and Z-shaped thermally actuated radio frequency (RF) MicroElectroMechanical Systems (MEMS) switches are designed and fabricated for the application of smart antennas. The switches are driven by a metal electrothermal actuator, which is able to generate large displacement and high contact force at lower temperatures. The MEMS switches utilizing the parallel beam actuator achieved 8 μm displacement. RF performances are improved by suspending the switching structures 25 μm above the substrate, thereby reducing the loss in the substrate. ON state insertion loss of −0.42 dB at 10 GHz, OFF state isolation of −40 dB at 10 GHz and return loss better than of −20 dB at 10 GHz for bidirectional Z-shaped thermally actuated RF MEMS switch are achieved on the low resistivity silicon substrate.
View less >
Journal Title
Microsystem Technologies
Volume
xx
Copyright Statement
© 2014 Springer Berlin Heidelberg. This is an electronic version of an article published in Microsystem Technologies, February 2015, Volume 21, Issue 2, pp 487–495. Microsystem Technologies is available online at: http://link.springer.com/ with the open URL of your article.
Subject
Microelectronics
Microelectromechanical systems (MEMS)
Communications engineering
Nanotechnology
Electronics, sensors and digital hardware