• myGriffith
    • Staff portal
    • Contact Us⌄
      • Future student enquiries 1800 677 728
      • Current student enquiries 1800 154 055
      • International enquiries +61 7 3735 6425
      • General enquiries 07 3735 7111
      • Online enquiries
      • Staff phonebook
    View Item 
    •   Home
    • Griffith Research Online
    • Journal articles
    • View Item
    • Home
    • Griffith Research Online
    • Journal articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

  • All of Griffith Research Online
    • Communities & Collections
    • Authors
    • By Issue Date
    • Titles
  • This Collection
    • Authors
    • By Issue Date
    • Titles
  • Statistics

  • Most Popular Items
  • Statistics by Country
  • Most Popular Authors
  • Support

  • Contact us
  • FAQs
  • Admin login

  • Login
  • RF sputtering of polycrystalline (100), (002), and (101) oriented AlN on an epitaxial 3C-SiC (100) on Si(100) substrate

    Author(s)
    Iqbal, Abid
    Chaik, Kien
    Walker, Glen
    Iacopi, Alan
    Mohd-Yasin, Faisal
    Dimitrijev, Sima
    Griffith University Author(s)
    Dimitrijev, Sima
    Mohd-Yasin, Faisal
    Year published
    2014
    Metadata
    Show full item record
    Abstract
    In this paper, the RF sputtering of polycrystalline AlN thin film on epitaxial 3C-SiC(100) on Si(100) substrate is presented. The effect of nitrogen concentration, deposition temperature and sputtering pressure are studied. These parameters are optimized to improve the crystal quality and deposition rate. Nitrogen concentration was varied from 40% to 100%, and it was found that the maximum deposition rate was observed at 40%. The RF bias power on substrate was also varied from 100 to 400 W, and it was observed that the deposition rate increases proportionally. The process temperature was varied from 200 to 400?àto see the ...
    View more >
    In this paper, the RF sputtering of polycrystalline AlN thin film on epitaxial 3C-SiC(100) on Si(100) substrate is presented. The effect of nitrogen concentration, deposition temperature and sputtering pressure are studied. These parameters are optimized to improve the crystal quality and deposition rate. Nitrogen concentration was varied from 40% to 100%, and it was found that the maximum deposition rate was observed at 40%. The RF bias power on substrate was also varied from 100 to 400 W, and it was observed that the deposition rate increases proportionally. The process temperature was varied from 200 to 400?àto see the effect on the crystal quality and deposition rate; it was found that temperature variation does not yield significant shifts. This paper is able to demonstrate a successful RF sputtering of a polycrystalline AlN (100), (101), and (002) on epitaxial 3C-SiC(100) using RF power supply of 550 W.
    View less >
    Journal Title
    Journal of Vacuum Science and Technology B
    Volume
    32
    Issue
    6
    DOI
    https://doi.org/10.1116/1.4900418
    Subject
    Atmospheric sciences
    Aerospace engineering
    Materials engineering
    Compound semiconductors
    Microelectromechanical systems (MEMS)
    Condensed matter physics
    Publication URI
    http://hdl.handle.net/10072/65452
    Collection
    • Journal articles

    Footer

    Disclaimer

    • Privacy policy
    • Copyright matters
    • CRICOS Provider - 00233E
    • TEQSA: PRV12076

    Tagline

    • Gold Coast
    • Logan
    • Brisbane - Queensland, Australia
    First Peoples of Australia
    • Aboriginal
    • Torres Strait Islander