RF sputtering of polycrystalline (100), (002), and (101) oriented AlN on an epitaxial 3C-SiC (100) on Si(100) substrate
Author(s)
Iqbal, Abid
Chaik, Kien
Walker, Glen
Iacopi, Alan
Mohd-Yasin, Faisal
Dimitrijev, Sima
Year published
2014
Metadata
Show full item recordAbstract
In this paper, the RF sputtering of polycrystalline AlN thin film on epitaxial 3C-SiC(100) on Si(100) substrate is presented. The effect of nitrogen concentration, deposition temperature and sputtering pressure are studied. These parameters are optimized to improve the crystal quality and deposition rate. Nitrogen concentration was varied from 40% to 100%, and it was found that the maximum deposition rate was observed at 40%. The RF bias power on substrate was also varied from 100 to 400 W, and it was observed that the deposition rate increases proportionally. The process temperature was varied from 200 to 400?àto see the ...
View more >In this paper, the RF sputtering of polycrystalline AlN thin film on epitaxial 3C-SiC(100) on Si(100) substrate is presented. The effect of nitrogen concentration, deposition temperature and sputtering pressure are studied. These parameters are optimized to improve the crystal quality and deposition rate. Nitrogen concentration was varied from 40% to 100%, and it was found that the maximum deposition rate was observed at 40%. The RF bias power on substrate was also varied from 100 to 400 W, and it was observed that the deposition rate increases proportionally. The process temperature was varied from 200 to 400?àto see the effect on the crystal quality and deposition rate; it was found that temperature variation does not yield significant shifts. This paper is able to demonstrate a successful RF sputtering of a polycrystalline AlN (100), (101), and (002) on epitaxial 3C-SiC(100) using RF power supply of 550 W.
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View more >In this paper, the RF sputtering of polycrystalline AlN thin film on epitaxial 3C-SiC(100) on Si(100) substrate is presented. The effect of nitrogen concentration, deposition temperature and sputtering pressure are studied. These parameters are optimized to improve the crystal quality and deposition rate. Nitrogen concentration was varied from 40% to 100%, and it was found that the maximum deposition rate was observed at 40%. The RF bias power on substrate was also varied from 100 to 400 W, and it was observed that the deposition rate increases proportionally. The process temperature was varied from 200 to 400?àto see the effect on the crystal quality and deposition rate; it was found that temperature variation does not yield significant shifts. This paper is able to demonstrate a successful RF sputtering of a polycrystalline AlN (100), (101), and (002) on epitaxial 3C-SiC(100) using RF power supply of 550 W.
View less >
Journal Title
Journal of Vacuum Science and Technology B
Volume
32
Issue
6
Subject
Atmospheric sciences
Aerospace engineering
Materials engineering
Compound semiconductors
Microelectromechanical systems (MEMS)
Condensed matter physics