Single-crystalline 3C-SiC thin-film on large Si substrate for photonic applications

This paper presents an unique low-temperature chemical vapor deposition process developed at Griffith University that enables the hetero-epitaxial growth of uniform single-crystalline cubic silicon carbide thin-film on very large silicon substrate. This technology, combined with the unique properties of silicon carbide, opens new opportunities for photonic applications on silicon.This paper presents an unique low-temperature chemical vapor deposition process developed at Griffith University that enables the hetero-epitaxial growth of uniform single-crystalline cubic silicon carbide thin-film on very large silicon substrate. This technology, combined with the unique properties of silicon carbide, opens new opportunities for photonic applications on silicon.
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Conference Title

Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

Volume

Publisher URI

http://www.techconnectworld.com/Nanotech2014/

https://www.nsti.org/procs/Nanotech2014v2/7/T8.173

Copyright Statement

© 2014 NSTI http://nsti.org. Reprinted and revised, with permission, from the Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics (Volume 2), pp. 416-419, 15-18 Jun 2014, Washington DC, U.S.A.

Subject

Photonics, optoelectronics and optical communications

Publication URI

http://hdl.handle.net/10072/65943

Collection

Conference outputs