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  • 3-D visualization of deep submicrometer transistor characteristics

    Author(s)
    Sitte, Renate
    Griffith University Author(s)
    Sitte, Renate
    Year published
    2000
    Metadata
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    Abstract
    This paper presents a method for the 3-D visualization of device parameters, to help identify potential regions of operation as well as highlighting process interactions. The results of the visualization are color-coded mappings of the device parameters, and regions that meet the required specification, both showing three process parameters simultaneously. The mappings can be presented as rotating volumes (cubes) and slice plot. They can be obtained with relative ease using commercially available software, and the approach could easily be integrated into existing simulation software.This paper presents a method for the 3-D visualization of device parameters, to help identify potential regions of operation as well as highlighting process interactions. The results of the visualization are color-coded mappings of the device parameters, and regions that meet the required specification, both showing three process parameters simultaneously. The mappings can be presented as rotating volumes (cubes) and slice plot. They can be obtained with relative ease using commercially available software, and the approach could easily be integrated into existing simulation software.
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    Journal Title
    IEEE Transactions on Semiconductor Manufacturing
    Volume
    13
    Issue
    MAY
    DOI
    https://doi.org/10.1109/66.843641
    Subject
    Electrical and Electronic Engineering
    Manufacturing Engineering
    Publication URI
    http://hdl.handle.net/10072/65972
    Collection
    • Journal articles

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