3-D visualization of deep submicrometer transistor characteristics

Abstract

This paper presents a method for the 3-D visualization of device parameters, to help identify potential regions of operation as well as highlighting process interactions. The results of the visualization are color-coded mappings of the device parameters, and regions that meet the required specification, both showing three process parameters simultaneously. The mappings can be presented as rotating volumes (cubes) and slice plot. They can be obtained with relative ease using commercially available software, and the approach could easily be integrated into existing simulation software.