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dc.contributor.authorSitte, Renate
dc.date.accessioned2006-07-25
dc.date.accessioned2015-01-23T05:25:07Z
dc.date.accessioned2017-03-02T00:01:00Z
dc.date.available2015-01-23T05:25:07Z
dc.date.available2017-03-02T00:01:00Z
dc.date.issued2000
dc.identifier.issn0894-6507
dc.identifier.doi10.1109/66.843641
dc.identifier.urihttp://hdl.handle.net/10072/65972
dc.description.abstractThis paper presents a method for the 3-D visualization of device parameters, to help identify potential regions of operation as well as highlighting process interactions. The results of the visualization are color-coded mappings of the device parameters, and regions that meet the required specification, both showing three process parameters simultaneously. The mappings can be presented as rotating volumes (cubes) and slice plot. They can be obtained with relative ease using commercially available software, and the approach could easily be integrated into existing simulation software.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.publisherInstitute of Electrical and Electronics Engineers
dc.publisher.placeUnited States
dc.relation.ispartofpagefrom249
dc.relation.ispartofpageto254
dc.relation.ispartofissueMAY
dc.relation.ispartofjournalIEEE Transactions on Semiconductor Manufacturing
dc.relation.ispartofvolume13
dc.subject.fieldofresearchElectrical and Electronic Engineering
dc.subject.fieldofresearchManufacturing Engineering
dc.subject.fieldofresearchcode0906
dc.subject.fieldofresearchcode0910
dc.title3-D visualization of deep submicrometer transistor characteristics
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codec1a
gro.facultyFaculty of Engineering and Information Technology
gro.hasfulltextNo Full Text
gro.griffith.authorSitte, Renate


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